PartNumber | DMTH8012LPSW-13 | DMTH8012LPS-13 | DMTH8012LPSQ-13 |
Description | MOSFET MOSFETBVDSS: 61V-100V | MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A | MOSFET MOSFET BVDSS: 61V-100V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-8 | PowerDI5060-8 | PowerDI5060-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 80 V | - | - |
Id Continuous Drain Current | 53.7 A | - | - |
Rds On Drain Source Resistance | 14 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 34 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 83.3 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Series | DMTH8012 | DMTH8012 | DMTH8012 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 3.5 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.8 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 16.5 ns | - | - |
Typical Turn On Delay Time | 4.9 ns | - | - |
Unit Weight | 0.003422 oz | 0.003386 oz | 0.003386 oz |
Qualification | - | - | AEC-Q101 |