DN0150ALP4-7

DN0150ALP4-7 vs DN0150ALP4-7 , XA6216B33 vs DN0150ALP4-7-F

 
PartNumberDN0150ALP4-7DN0150ALP4-7 , XA6216B33DN0150ALP4-7-F
DescriptionBipolar Transistors - BJT NPN 50V 0.1A 3-PIN SMT
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDFN-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT60 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDN0150--
DC Current Gain hFE Max120 at 2 mA, 6 V--
Height0.35 mm--
Length1 mm--
PackagingReel--
Width0.6 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation450 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DN0150ALP4-7 Bipolar Transistors - BJT NPN 50V 0.1A 3-PIN SMT
DN0150ALP4-7B Bipolar Transistors - BJT 50V Small Sig Trans 60V VCBO 50V VCEO
DN0150ALP4-7 , XA6216B33 Neu und Original
DN0150ALP4-7-F Neu und Original
DN0150ALP4-7 Bipolar Transistors - BJT NPN 50V 0.1A 3-PIN SMT
DN0150ALP4-7B Bipolar Transistors - BJT 50V Small Sig Trans 60V VCBO 50V VCEO
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