PartNumber | DN2535N3-G-P003 | DN2535N3-G | DN2535N3-G-P013 |
Description | MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92 | MOSFET 350V 25Ohm | MOSFET N-Channel MOSFET 350V 0.12A 3P TO-92 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 350 V | 350 V | 350 V |
Id Continuous Drain Current | 120 mA | 120 mA | 120 mA |
Rds On Drain Source Resistance | 25 Ohms | 25 Ohms | 25 Ohms |
Configuration | Single | Single | Single |
Packaging | Reel | Bulk | Ammo Pack |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Microchip Technology | Microchip Technology | Microchip Technology |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 1000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 1 W | - |
Channel Mode | - | Depletion | - |
Height | - | 5.33 mm | - |
Length | - | 5.21 mm | - |
Type | - | FET | - |
Width | - | 4.19 mm | - |
Forward Transconductance Min | - | 325 mS | - |
Fall Time | - | 20 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |