 |  |  | |
| PartNumber | DP0150BLP4-7B | DP0150BLP4-7 | DP0150BLP4-7 , XC25BS500 |
| Description | Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K | Bipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN1006H4-3 | DFN-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 50 V | 50 V | - |
| Collector Base Voltage VCBO | - 50 V | 50 V | - |
| Emitter Base Voltage VEBO | - 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | - 300 mV | - | - |
| Maximum DC Collector Current | - 200 mA | 0.1 A | - |
| Gain Bandwidth Product fT | 80 MHz | 80 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | DP0150 | DP0150 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 at - 2 mA, - 6 V | 200 | - |
| Pd Power Dissipation | 450 mW | 450 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| DC Current Gain hFE Max | - | 200 at 2 mA, 6 V | - |
| Height | - | 0.35 mm | - |
| Length | - | 1 mm | - |
| Width | - | 0.6 mm | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DP0150BLP4-7B | Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K | |
| DP0150BLP4-7 | Bipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT | ||
| DP0150BLP4-7 , XC25BS500 | Neu und Original | ||
| DP0150BLP4-7 | Bipolar Transistors - BJT PNP 50V 0.1A 3-PIN SMT | ||
| DP0150BLP4-7B | Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K |