DPLS32

DPLS320A-7 vs DPLS320A vs DPLS320A-7-F

 
PartNumberDPLS320A-7DPLS320ADPLS320A-7-F
DescriptionBipolar Transistors - BJT PNP 0.6W
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTIC Chips-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 20 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 330 mV- 330 mV-
Maximum DC Collector Current- 5 A- 5 A-
Gain Bandwidth Product fT215 MHz215 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDPLS320DPLS320-
Height1.1 mm--
Length3 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.4 mm--
BrandDiodes Incorporated--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-600mW-
Transistor Type-PNP-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-200 @ 1A, 2V-
Vce Saturation Max Ib Ic-330mV @ 300mA, 3A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-215MHz-
Pd Power Dissipation-600 mW-
Collector Emitter Voltage VCEO Max-- 20 V-
Collector Base Voltage VCBO-- 20 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-100 at - 3 A - 2 V-
DC Current Gain hFE Max-220 at 0.1 A at 2 V-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DPLS320A-7 Bipolar Transistors - BJT PNP 0.6W
DPLS325E-13 Bipolar Transistors - BJT PNP 1W
DPLS320A Neu und Original
DPLS320A-7-F Neu und Original
DPLS325E-13 Bipolar Transistors - BJT PNP 1W
DPLS320A-7 Bipolar Transistors - BJT PNP 0.6W
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