DXT3906

DXT3906-13 vs DXT3906 vs DXT3906-13-F

 
PartNumberDXT3906-13DXT3906DXT3906-13-F
DescriptionBipolar Transistors - BJT 1000mW -40Vceo
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 400 mV- 400 mV-
Maximum DC Collector Current- 200 mA- 200 mA-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDXT3906DXT3906-
Height1.5 mm--
Length4.5 mm--
PackagingReelReel-
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min30 at - 100 mA, - 1 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-SOT-89-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-- 40 V-
Collector Base Voltage VCBO-- 40 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-30 at - 100 mA - 1 V-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DXT3906-13 Bipolar Transistors - BJT 1000mW -40Vceo
DXT3906 Neu und Original
DXT3906-13-F Neu und Original
DXT3906-13 Bipolar Transistors - BJT 1000mW -40Vceo
Top