 |  | | |
| PartNumber | DXT651-13 | DXT651-13-73 | DXT651-13-90 |
| Description | Bipolar Transistors - BJT BIPOLAR NPN | ||
| Manufacturer | Diodes Incorporated | - | DIODES |
| Product Category | Bipolar Transistors - BJT | - | IC Chips |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 200 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DXT651 | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.5 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001834 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DXT651-13 | Bipolar Transistors - BJT BIPOLAR NPN | |
| DXT651-13-73 | Neu und Original | ||
| DXT651-13-90 | Neu und Original | ||
| DXT651-13-F | Neu und Original | ||
| DXT651-13R | Neu und Original | ||
| DXT651-13 | Bipolar Transistors - BJT BIPOLAR NPN |