PartNumber | EGF1BHE367A | EGF1BHE3/67A | EGF1BHE3/5CA |
Description | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214BA | Rectifiers 100 Volt 1.0A 50ns Glass Passivated | Rectifiers 100 Volt 1.0A 50ns Glass Passivated |
Manufacturer | - | Vishay Semiconductor Diodes Division | Vishay Semiconductor Diodes Division |
Product Category | - | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
Series | - | SUPERECTIFIERR | SUPERECTIFIERR |
Product | - | Ultra Fast Recovery Rectifiers | Ultra Fast Recovery Rectifiers |
Packaging | - | Tape & Reel (TR) Alternate Packaging | Tape & Reel (TR) Alternate Packaging |
Unit Weight | - | 0.003668 oz | 0.003668 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package Case | - | DO-214BA | DO-214BA |
Mounting Type | - | Surface Mount | Surface Mount |
Supplier Device Package | - | DO-214BA (GF1) | DO-214BA (GF1) |
Configuration | - | Single | Single |
Speed | - | Fast Recovery = 200mA (Io) | Fast Recovery = 200mA (Io) |
Diode Type | - | Standard | Standard |
Current Reverse Leakage Vr | - | 5μA @ 100V | 5μA @ 100V |
Voltage Forward Vf Max If | - | 1V @ 1A | 1V @ 1A |
Voltage DC Reverse Vr Max | - | 100V | 100V |
Current Average Rectified Io | - | 1A | 1A |
Reverse Recovery Time trr | - | 50ns | 50ns |
Capacitance Vr F | - | 15pF @ 4V, 1MHz | 15pF @ 4V, 1MHz |
Operating Temperature Junction | - | -65°C ~ 175°C | -65°C ~ 175°C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Vf Forward Voltage | - | 1 V | 1 V |
Vr Reverse Voltage | - | 100 V | 100 V |
Ir Reverse Current | - | 5 uA | 5 uA |
If Forward Current | - | 1 A | 1 A |
Max Surge Current | - | 30 A | 30 A |
Recovery Time | - | 50 ns | 50 ns |