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| PartNumber | EMF18XV6T5G | EMF18 | EMF18XV6T5 |
| Description | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP | Bipolar Transistors - Pre-Biased Dual Complementary | |
| Manufacturer | ON Semiconductor | ROHM | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | IC Chips | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Dual | - | Dual |
| Transistor Polarity | NPN, PNP | - | NPN PNP |
| Typical Input Resistor | 47 kOhms | - | 47 kOhms |
| Typical Resistor Ratio | 1 | - | 1 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | 0.1 A |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | EMF18XV6 | - | EMF18XV6 |
| Packaging | Reel | - | Tape & Reel (TR) |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | 0.000289 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| Power Max | - | - | 500mW |
| Transistor Type | - | - | 1 NPN Pre-Biased, 1 PNP |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V, 60V |
| Resistor Base R1 Ohms | - | - | 47k |
| Resistor Emitter Base R2 Ohms | - | - | 47k |
| DC Current Gain hFE Min Ic Vce | - | - | 80 @ 5mA, 10V / 120 @ 1mA, 6V |
| Vce Saturation Max Ib Ic | - | - | 250mV @ 300μA, 10mA / 500mV @ 5mA, 50mA |
| Current Collector Cutoff Max | - | - | 500nA |
| Frequency Transition | - | - | 140MHz |
| Pd Power Dissipation | - | - | 357 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V at NPN 60 V at PNP |
| DC Collector Base Gain hfe Min | - | - | 80 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| EMF18XV6T5G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP | ||
| EMF18 | Neu und Original | ||
| EMF18XV6T5 | Bipolar Transistors - Pre-Biased Dual Complementary | ||
ON Semiconductor |
EMF18XV6T5G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP |