EMT1DXV6T1

EMT1DXV6T1G vs EMT1DXV6T1 vs EMT1DXV6T1/3TX

 
PartNumberEMT1DXV6T1GEMT1DXV6T1EMT1DXV6T1/3TX
DescriptionBipolar Transistors - BJT 100mA 60V Dual PNPBipolar Transistors - BJT 100mA 60V Dual PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-6-
Transistor PolarityPNPPNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 60 V- 60 V-
Collector Base Voltage VCBO- 50 V- 50 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage- 0.5 V- 0.5 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT140 MHz140 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesEMT SERIES--
Height0.55 mm0.55 mm-
Length1.6 mm1.6 mm-
PackagingReelReel-
Width1.2 mm1.2 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.1 A- 0.1 A-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation357 mW357 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity4000--
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz0.000106 oz-
Hersteller Teil # Beschreibung RFQ
EMT1DXV6T1G Bipolar Transistors - BJT 100mA 60V Dual PNP
EMT1DXV6T1/3TX Neu und Original
EMT1DXV6T1G , MAX6762TAL Neu und Original
ON Semiconductor
ON Semiconductor
EMT1DXV6T1 Bipolar Transistors - BJT 100mA 60V Dual PNP
EMT1DXV6T1G TRANS 2PNP 60V 0.1A SOT563
EMT1DXV6T1 TRANS 2PNP 60V 0.1A SOT563
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