 |  | | |
| PartNumber | EMX1DXV6T1G | EMX1DXV6T1/3XX | EMX1DXV6T5 |
| Description | Bipolar Transistors - BJT 100mA 60V Dual NPN | Bipolar Transistors - BJT 100mA 60V Dual NPN | |
| Manufacturer | ON Semiconductor | - | ON |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 180 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | EMX1 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 357 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| EMX1DXV6T5G | Bipolar Transistors - BJT 100mA 60V Dual NPN | ||
| EMX1DXV6T1G | Bipolar Transistors - BJT 100mA 60V Dual NPN | ||
| EMX1DXV6T1/3XX | Neu und Original | ||
| EMX1DXV6T5 | Bipolar Transistors - BJT 100mA 60V Dual NPN | ||
ON Semiconductor |
EMX1DXV6T1 | Bipolar Transistors - BJT 100mA 60V Dual NPN | |
| EMX1DXV6T5G | Bipolar Transistors - BJT 100mA 60V Dual NPN | ||
| EMX1DXV6T1G | Bipolar Transistors - BJT 100mA 60V Dual NPN | ||
| EMX1DXV6T1 | TRANS 2NPN 50V 0.1A SOT563 |