EMX4

EMX4T2R vs EMX4 vs EMX400

 
PartNumberEMX4T2REMX4EMX400
DescriptionBipolar Transistors - BJT DUAL NPN 30V 50MA
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO3 V--
Maximum DC Collector Current0.05 A0.05 A-
Gain Bandwidth Product fT1.5 GHz1.5 GHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesEMX4EMX4-
DC Current Gain hFE Max27 at 10 mA, 10 V27 at 10 mA at 10 V-
Height0.5 mm--
Length1.6 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.2 mm--
BrandROHM Semiconductor--
DC Collector/Base Gain hfe Min27--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity8000--
SubcategoryTransistors--
Part # AliasesEMX4--
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Supplier Device Package-EMT6-
Power Max-150mW-
Transistor Type-2 NPN (Dual)-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-56 @ 10mA, 10V-
Vce Saturation Max Ib Ic-500mV @ 4mA, 20mA-
Current Collector Cutoff Max-500nA (ICBO)-
Frequency Transition-1.5GHz-
Pd Power Dissipation-150 mW-
Collector Emitter Voltage VCEO Max-20 V-
Collector Base Voltage VCBO-30 V-
Emitter Base Voltage VEBO-3 V-
DC Collector Base Gain hfe Min-27-
Hersteller Teil # Beschreibung RFQ
EMX4T2R Bipolar Transistors - BJT DUAL NPN 30V 50MA
EMX4T2R Bipolar Transistors - BJT DUAL NPN 30V 50MA
EMX4 Neu und Original
EMX400 Neu und Original
Top