 |  | | |
| PartNumber | FCP9N60N | FCP9N60C | FCP9N60N-- |
| Description | MOSFET SupreMOS 9A | ||
| Manufacturer | ON Semiconductor | KERSEMI | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 5.7 A | - | - |
| Rds On Drain Source Resistance | 330 mOhms | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83.3 W | - | - |
| Configuration | Single | - | - |
| Tradename | SupreMOS | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FCP9N60N | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | N-Channel MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 7.5 S | - | - |
| Fall Time | 10.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.7 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36.9 ns | - | - |
| Typical Turn On Delay Time | 12.7 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCP9N60N | MOSFET SupreMOS 9A | |
| FCP9N60N-F102 | MOSFET FCP9N60N, in TO220 F102 T/F option | ||
| FCP9N60C | Neu und Original | ||
| FCP9N60N-FSC | Neu und Original | ||
| FCP9N60N_F102 | N-Channel MOSFET 600V, 9A, 0.385OHM | ||
| FCP9N60N-- | Neu und Original | ||
ON Semiconductor |
FCP9N60N | MOSFET N-CH 600V 9A TO220 | |
| FCP9N60N-F102 | MOSFET N-CHANNEL 600V 9A TO220F |