FCP9N60N

FCP9N60N vs FCP9N60N-F102

 
PartNumberFCP9N60NFCP9N60N-F102
DescriptionMOSFET SupreMOS 9AMOSFET FCP9N60N, in TO220 F102 T/F option
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current5.7 A-
Rds On Drain Source Resistance330 mOhms-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation83.3 W-
ConfigurationSingle-
TradenameSupreMOS-
PackagingTubeTube
Height16.3 mm16.3 mm
Length10.67 mm10.67 mm
SeriesFCP9N60N-
Transistor Type1 N-Channel-
TypeN-Channel MOSFET-
Width4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min7.5 S-
Fall Time10.2 ns-
Product TypeMOSFETMOSFET
Rise Time8.7 ns-
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time36.9 ns-
Typical Turn On Delay Time12.7 ns-
Unit Weight0.063493 oz0.063493 oz
Part # Aliases-FCP9N60N_F102
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP9N60N MOSFET SupreMOS 9A
FCP9N60N-F102 MOSFET FCP9N60N, in TO220 F102 T/F option
ON Semiconductor
ON Semiconductor
FCP9N60N MOSFET N-CH 600V 9A TO220
FCP9N60N-F102 MOSFET N-CHANNEL 600V 9A TO220F
FCP9N60N-FSC Neu und Original
FCP9N60N_F102 N-Channel MOSFET 600V, 9A, 0.385OHM
FCP9N60N-- Neu und Original
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