 | | | |
| PartNumber | FDB3682 | FDB38N30U | FDB3672-F085 |
| Description | MOSFET 100V N-Channel Pwr Trench | MOSFET UF 300V 120MOHM U DPAK | MOSFET 100V 44A N-Channel PowerTrench |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 300 V | 100 V |
| Id Continuous Drain Current | 32 A | 38 A | 7.2 A |
| Rds On Drain Source Resistance | 32 mOhms | 103 mOhms | 28 mOhms |
| Vgs Gate Source Voltage | 20 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Pd Power Dissipation | 95 W | 313 W | 120 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | PowerTrench | UniFET FRFET | UltraFET |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FDB3682 | FDB38N30U | FDB3672_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | - |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 32 ns | 62 ns | 44 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 46 ns | 80 ns | 59 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 133 ns | 26 ns |
| Typical Turn On Delay Time | 9 ns | 33 ns | 11 ns |
| Part # Aliases | FDB3682_NL | - | FDB3672_F085 |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Qg Gate Charge | - | 56 nC | - |
| Forward Transconductance Min | - | 30 S | - |
| Qualification | - | - | AEC-Q101 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB52N20TM | MOSFET 200V N-Ch MOSFET | |
| FDB3682 | MOSFET 100V N-Channel Pwr Trench | ||
| FDB44N25TM | MOSFET 250V N-Ch MOSFET | ||
| FDB38N30U | MOSFET UF 300V 120MOHM U DPAK | ||
| FDB3672-F085 | MOSFET 100V 44A N-Channel PowerTrench | ||
| FDB390N15A | MOSFET 150V NCHAN PwrTrench | ||
| FDB4020P | MOSFET P-Ch Spec Enhance MODE FIELD EFFECT | ||
| FDB42AN15A0-F085 | MOSFET NMOS D2PAK 150V 42 MOHM | ||
| FDB5690 | MOSFET 60V N-Channel Power Trench | ||
ON Semiconductor |
FDB390N15A | Darlington Transistors MOSFET 150V NCHAN PwrTrench | |
| FDB3672-F085 | MOSFET N-CH 100V 44A D2PAK | ||
| FDB3682 | MOSFET N-CH 100V 6A TO-263AB | ||
| FDB3860 | MOSFET N-CH 100V 6.4A D2PAK | ||
| FDB38N30U | MOSFET N CH 300V 38A D2PAK | ||
| FDB4020P | MOSFET P-CH 20V 16A TO-263AB | ||
| FDB42AN15A0 | MOSFET N-CH 150V 35A TO-263AB | ||
| FDB42AN15A0-F085 | MOSFET N-CH 150V 35A TO-263AB | ||
| FDB44N25TM | MOSFET N-CH 250V 44A D2PAK | ||
| FDB52N20TM | MOSFET N-CH 200V 52A D2PAK | ||
| FDB5645 | MOSFET N-CH 60V 80A TO-263AB | ||
| FDB5690 | MOSFET N-CH 60V 32A TO-263AB | ||
| FDB42AN15A0_F085 | IGBT Transistors MOSFET NOT AVAILABLE THROUGH MOUSER | ||
| FDB3672-NL | Neu und Original | ||
| FDB3672_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB3682-NL | Neu und Original | ||
| FDB3G32 | Neu und Original | ||
| FDB3N40 | Neu und Original | ||
| FDB4020PTM-NL | Neu und Original | ||
| FDB4030L | - Bulk (Alt: FDB4030L) | ||
| FDB40AN06LA0 | Neu und Original | ||
| FDB418/183-05-K2 | Neu und Original | ||
| FDB42AN | Neu und Original | ||
| FDB42AN15AO | Neu und Original | ||
| FDB42AN15_F085 | Neu und Original | ||
| FDB44N10 | Neu und Original | ||
| FDB44N25 | Neu und Original | ||
| FDB46N15 | Neu und Original | ||
| FDB4N60 | Neu und Original | ||
| FDB52N20 | Neu und Original | ||
| FDB52N20 52N20 52A 200 | Neu und Original | ||
| FDB52N20TM-NL | Neu und Original | ||
| FDB54N20 | Neu und Original | ||
| FDB55N06 | Neu und Original | ||
| FDB5645-NL | Neu und Original | ||
| FDB5680 | Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FDB5685 | Neu und Original | ||
| FDB5686 | Neu und Original | ||
| FDB5690-NL | Neu und Original | ||
| FDB44N25TM-CUT TAPE | Neu und Original | ||
| FDB52N20TM-CUT TAPE | Neu und Original |