FDB070AN06A

FDB070AN06A0-F085 vs FDB070AN06A0

 
PartNumberFDB070AN06A0-F085FDB070AN06A0
DescriptionMOSFET N-CHANNEL POWERTRENCH MOSFETMOSFET N-Channel PT 6V 8A 7mOhm
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current80 A80 A
Rds On Drain Source Resistance6.1 mOhms6.1 mOhms
Vgs th Gate Source Threshold Voltage4 V-
Qg Gate Charge51 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation175 W175 W
ConfigurationSingleSingle
QualificationAEC-Q101-
PackagingReelReel
Height4.83 mm4.83 mm
Length10.67 mm10.67 mm
SeriesFDB070AN06_F085FDB070AN06A0
Transistor Type1 N-Channel1 N-Channel
Width9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time35 ns35 ns
Product TypeMOSFETMOSFET
Rise Time159 ns159 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns27 ns
Typical Turn On Delay Time12 ns12 ns
Part # AliasesFDB070AN06A0_F085FDB070AN06A0_NL
Unit Weight0.046296 oz0.046296 oz
Vgs Gate Source Voltage-20 V
Channel Mode-Enhancement
Tradename-PowerTrench
Type-MOSFET
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB070AN06A0-F085 MOSFET N-CHANNEL POWERTRENCH MOSFET
FDB070AN06A0 MOSFET N-Channel PT 6V 8A 7mOhm
ON Semiconductor
ON Semiconductor
FDB070AN06A0 MOSFET N-CH 60V 80A TO-263AB
FDB070AN06A0-F085 MOSFET N-CH 60V 15A TO-263AB
FDB070AN06A0_F085 N-CHANNEL POWERTRENCH MOSFET
FDB070AN06AO Neu und Original
FDB070AN06A0-CUT TAPE Neu und Original
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