 |  | | |
| PartNumber | FDB12N50FTM-WS | FDB12N50F | FDB12N50FTM |
| Description | MOSFET 500V 11.5A 0.7Ohm N-Channel | - Bulk (Alt: FDB12N50FTM) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 11.5 A | - | - |
| Rds On Drain Source Resistance | 590 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 165 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDB12N50F | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Part # Aliases | FDB12N50FTM_WS | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB12N50FTM-WS | MOSFET 500V 11.5A 0.7Ohm N-Channel | |
| FDB12N50FTM_WS | Darlington Transistors MOSFET 500V 11.5A 0.7Ohm N-Channel | ||
| FDB12N50F | Neu und Original | ||
| FDB12N50FTM | - Bulk (Alt: FDB12N50FTM) | ||
ON Semiconductor |
FDB12N50FTM-WS | MOSFET N-CH 500V 11.5A D2PAK |