FDB2532-F

FDB2532-F085

 
PartNumberFDB2532-F085
DescriptionMOSFET 150V N-Channel PowerTrench MOSFET
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage150 V
Id Continuous Drain Current79 A
Rds On Drain Source Resistance14 mOhms
Vgs th Gate Source Threshold Voltage4 V
Vgs Gate Source Voltage20 V
Qg Gate Charge82 nC
Pd Power Dissipation310 W
ConfigurationSingle
QualificationAEC-Q101
TradenamePowerTrench
PackagingReel
Height4.83 mm
Length10.67 mm
SeriesFDB2532_F085
Transistor Type1 N-Channel
Width9.65 mm
BrandON Semiconductor / Fairchild
Fall Time17 ns
Product TypeMOSFET
Rise Time30 ns
Factory Pack Quantity800
SubcategoryMOSFETs
Part # AliasesFDB2532_F085
Unit Weight0.046296 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB2532-F085 MOSFET 150V N-Channel PowerTrench MOSFET
ON Semiconductor
ON Semiconductor
FDB2532-F085 MOSFET N-CH 150V 79A D2PAK
Top