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FDB8442

FDB8442-F085 vs FDB8442 vs FDB8442_F085

 
PartNumberFDB8442-F085FDB8442FDB8442_F085
DescriptionMOSFET 40V NCHAN PwrTrenchMOSFET 40V N-Ch PowerTrench MOSFETIGBT Transistors MOSFET 40V NCHAN PwrTrench
ManufacturerON SemiconductorON SemiconductorFSC
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance2.1 mOhms2.1 mOhms-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation254 W254 W-
ConfigurationSingleSingle-
QualificationAEC-Q101--
PackagingReelReelReel
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB8442_F085FDB8442-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesFDB8442_F085--
Unit Weight0.046296 oz0.046296 oz0.046296 oz
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
Fall Time-17.2 ns-
Rise Time-19.3 ns-
Typical Turn Off Delay Time-57 ns-
Typical Turn On Delay Time-19.5 ns-
Package Case--TO-252-3
Pd Power Dissipation--254 W
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--2.1 mOhms
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FDB8442-F085 MOSFET 40V NCHAN PwrTrench
FDB8442 MOSFET 40V N-Ch PowerTrench MOSFET
FDB8442_F085 IGBT Transistors MOSFET 40V NCHAN PwrTrench
ON Semiconductor
ON Semiconductor 		FDB8442 MOSFET N-CH 40V 80A D2PAK
FDB8442-F085 MOSFET N-CH 40V 28A D2PAK
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