 | | |
| PartNumber | FDB8860 | FDB8860-F085 |
| Description | MOSFET 30V N-Channel PwrTrch MOSFET | MOSFET 30V N-Ch PowerTrench |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 80 A | 31 A |
| Rds On Drain Source Resistance | 1.9 mOhms | 1.9 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 254 W | 254 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | PowerTrench | PowerTrench |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FDB8860 | FDB8860_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 49 ns | 49 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 213 ns | 213 ns |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 79 ns | 79 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns |
| Unit Weight | 0.046296 oz | 0.046296 oz |
| Qualification | - | AEC-Q101 |
| Part # Aliases | - | FDB8860_F085 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB8860 | MOSFET 30V N-Channel PwrTrch MOSFET | |
| FDB8860-F085 | MOSFET 30V N-Ch PowerTrench | ||
ON Semiconductor |
FDB8860 | MOSFET N-CH 30V 80A D2PAK | |
| FDB8860-F085 | MOSFET N-CH 30V 80A D2PAK | ||
| FDB8860_F085 | RF Bipolar Transistors MOSFET 30V N-Ch PowerTrench |