FDB887

FDB8870 vs FDB8874 vs FDB8870-F085

 
PartNumberFDB8870FDB8874FDB8870-F085
DescriptionMOSFET 30V N-Channel PowerTrenchMOSFET 30V N-Channel PowerTrenchMOSFET N-CH 30V 21A TO-263AB
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current160 A121 A-
Rds On Drain Source Resistance3.9 mOhms4.7 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation160 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerTrench--
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB8870--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time47 ns34 ns-
Product TypeMOSFETMOSFET-
Rise Time98 ns135 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time75 ns45 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesFDB8870_NLFDB8874_NL-
Unit Weight0.046296 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB8870 MOSFET 30V N-Channel PowerTrench
FDB8874 MOSFET 30V N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDB8870 MOSFET N-CH 30V 23A TO-263AB
FDB8870-F085 MOSFET N-CH 30V 21A TO-263AB
FDB8874 MOSFET N-CH 30V 121A TO-263AB
FDB8876 MOSFET N-CH 30V 71A D2PAK
FDB8878 MOSFET N-CH 30V 48A D2PAK
FDB8870_F085 IGBT Transistors MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH
FDB8870 IRL3803STRLPBF Neu und Original
FDB8870-NL Neu und Original
FDB8874-NL Neu und Original
FDB8876-NL Neu und Original
FDB8878-NL Neu und Original
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