 |  | | |
| PartNumber | FDBL86062-F085 | FDBL86062 | FDBL86062_F085 |
| Description | MOSFET PTNG 100V N-Channel Power Trench MOSFET | N-Channel Power Trench MOSFET (Alt: FDBL86062-F085) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-PSOF-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 300 A | - | - |
| Rds On Drain Source Resistance | 1.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 124 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 429 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Series | FDBL86062_F085 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36 ns | - | - |
| Typical Turn On Delay Time | 31 ns | - | - |
| Part # Aliases | FDBL86062_F085 | - | - |
| Unit Weight | 0.029985 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDBL86062-F085 | MOSFET PTNG 100V N-Channel Power Trench MOSFET | |
| FDBL86062 | Neu und Original | ||
| FDBL86062_F085 | N-Channel Power Trench MOSFET (Alt: FDBL86062-F085) | ||
ON Semiconductor |
FDBL86062-F085 | MOSFET N-CH 100V 300A 8-HPSOF |