FDD

FDD5690 vs FDD5680 vs FDD5810

 
PartNumberFDD5690FDD5680FDD5810
DescriptionMOSFET 60V N-Ch PowerTrenchMOSFET N-Ch PowerTrenchMOSFET LOW VOLTAGE
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current30 A38 A35 A
Rds On Drain Source Resistance23 mOhms17 mOhms16.5 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 175 C
Pd Power Dissipation3.2 W60 W88 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerTrenchPowerTrench-
PackagingReelReelReel
Height2.39 mm2.39 mm2.39 mm
Length6.73 mm6.73 mm6.73 mm
SeriesFDD5690FDD5680-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min24 S30 S-
Fall Time10 ns16 ns34 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns9 ns75 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time24 ns35 ns26 ns
Typical Turn On Delay Time10 ns15 ns12 ns
Part # AliasesFDD5690_NLFDD5680_NL-
Unit Weight0.009184 oz0.009184 oz0.139332 oz
  • Beginnen mit
  • FDD 715
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD5690 MOSFET 60V N-Ch PowerTrench
FDD5810-F085 MOSFET LOW VOLTAGE
FDD5N50NZTM MOSFET UNIFET2 500V
FDD5N50UTM-WS MOSFET UniFET 500V 3A
FDD5680 MOSFET N-Ch PowerTrench
FDD5N50NZFTM MOSFET 500V N-Channel UniFET-II
FDD5N50FTM-WS MOSFET UniFET 500V 3.5A
FDD5N50FTM-TWS MOSFET MOSFET, UniFET 500V / 3.5A
FDD5N50TM-WS MOSFET UniFET 500V 4A
FDD5810 MOSFET LOW VOLTAGE
FDD5N50TM_WS IGBT Transistors MOSFET UniFET 500V 4A
FDD5N50FTM_WS IGBT Transistors MOSFET UniFET 500V 3.5A
FDD5670-NL Neu und Original
FDD5670FAIRCHILD Neu und Original
FDD5680-NL Neu und Original
FDD5680FSC Neu und Original
FDD5690-NL Neu und Original
FDD5690.. Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
FDD5690CT Neu und Original
FDD5690FSC Neu und Original
FDD5690_Q Neu und Original
FDD5810_F085 60V, 35A, 27 OHM, NCH, POWER T
FDD5N15 Neu und Original
FDD5N50 Neu und Original
FDD5N50F Neu und Original
FDD5N50NZ Neu und Original
FDD5N50NZF Neu und Original
FDD5N50U Neu und Original
FDD5N50UTM - Bulk (Alt: FDD5N50UTM)
FDD5N60NZ Neu und Original
FDD5690-CUT TAPE Neu und Original
FDD5N50NZTM-CUT TAPE Neu und Original
FDD5N50FTMWS Neu und Original
ON Semiconductor
ON Semiconductor
FDD5680 MOSFET N-CH 60V 8.5A D-PAK
FDD5690 MOSFET N-CH 60V 30A D-PAK
FDD5810 MOSFET N-CH 60V 37A DPAK
FDD5N50FTM-WS MOSFET N-CH 500V 3.5A DPAK
FDD5N50NZFTM MOSFET N-CH 500V DPAK
FDD5N50NZTM MOSFET N-CH 500V DPAK
FDD5N50TF_WS MOSFET N-CH 500V 4A DPAK
FDD5N53TM_WS MOSFET N-CH 530V 4A DPAK
FDD5810-F085 MOSFET N-CH 60V 37A DPAK
FDD5N50TM-WS MOSFET N-CH 500V 4A DPAK
FDD5N50FTF_WS MOSFET N-CH 500V 3.5A DPAK
FDD5N50UTF_WS MOSFET N-CH 500V 3A DPAK
FDD5N50UTM-WS MOSFET, UNIFET, 500V, / 3A
FDD5N50FTM Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FDD5N50TF - Bulk (Alt: FDD5N50TF)
FDD5N50TM Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FDD5N53TM Power Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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