FDD367

FDD3672 vs FDD3670 vs FDD3672-F085

 
PartNumberFDD3672FDD3670FDD3672-F085
DescriptionMOSFET 100V 44a .28 Ohms/VGS=1VMOSFET 100V NCh PowerTrenchMOSFET 100V NChannel UniFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSEEY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current44 A34 A44 A
Rds On Drain Source Resistance28 mOhms22 mOhms24 mOhms
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation135 W3.8 W144 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameUltraFETPowerTrenchUltraFET
PackagingReelReelReel
Height2.39 mm2.39 mm2.39 mm
Length6.73 mm6.73 mm6.73 mm
SeriesFDD3672FDD3670FDD3672_F085
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time44 ns25 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time59 ns10 ns-
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns56 ns-
Typical Turn On Delay Time11 ns16 ns-
Part # AliasesFDD3672_NLFDD3670_NLFDD3672_F085
Unit Weight0.009184 oz0.009184 oz0.009184 oz
Forward Transconductance Min-31 S-
Qualification--AEC-Q101
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD3672 MOSFET 100V 44a .28 Ohms/VGS=1V
FDD3670 MOSFET 100V NCh PowerTrench
FDD3672-F085 MOSFET 100V NChannel UniFET
ON Semiconductor
ON Semiconductor
FDD3670 MOSFET N-CH 100V 34A D-PAK
FDD3672 MOSFET N-CH 100V 44A D-PAK
FDD3672-F085 MOSFET N-CH 100V 44A DPAK-3
FDD3670 FDD3672 Neu und Original
FDD3672_F085 100V, 44A, 28M OHM N-CHANNEL U
FDD3672_NL Neu und Original
FDD3672-CUT TAPE Neu und Original
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