FDD677

FDD6776A vs FDD6778A vs FDD6770A

 
PartNumberFDD6776AFDD6778AFDD6770A
DescriptionMOSFET 25V 30A N-Channel PowerTrenchMOSFET 25V 10A N-Channel PowerTrenchMOSFET N-CH 25V 24A DPAK
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current17.7 A12 A-
Rds On Drain Source Resistance7.5 mOhms14 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation3.7 W3.7 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time3 ns2 ns5 ns
Product TypeMOSFETMOSFET-
Rise Time5 ns3 ns7 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time18 ns14 ns24 ns
Typical Turn On Delay Time8 ns6 ns9 ns
Unit Weight0.000557 oz0.009184 oz0.009184 oz
Series-FDD6778A-
Package Case--TO-252-3
Pd Power Dissipation--3.7 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--27 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--4 mOhms
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD6776A MOSFET 25V 30A N-Channel PowerTrench
FDD6778A MOSFET 25V 10A N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDD6770A MOSFET N-CH 25V 24A DPAK
FDD6776A MOSFET N-CH 25V 17.7A DPAK
FDD6778A MOSFET N-CH 25V 12A DPAK
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