 |  | | |
| PartNumber | FDD6N25TM | FDD6N25 | FDD6N25TM 2.6A 250V |
| Description | MOSFET 250V N-CH MOSFET | ||
| Manufacturer | ON Semiconductor | - | |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 4.4 A | - | - |
| Rds On Drain Source Resistance | 900 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FDD6N25 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.009184 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD6N25TM | MOSFET 250V N-CH MOSFET | |
| FDD6N25 | Neu und Original | ||
| FDD6N25TM 2.6A 250V | Neu und Original | ||
| FDD6N25TM,FDD6N25 | Neu und Original | ||
ON Semiconductor |
FDD6N25TF | MOSFET N-CH 250V 4.4A DPAK | |
| FDD6N25TM | MOSFET N-CH 250V 4.4A DPAK |