FDG6303N

FDG6303N vs FDG6303N_D87Z vs FDG6303N-F169

 
PartNumberFDG6303NFDG6303N_D87ZFDG6303N-F169
DescriptionMOSFET SC70-6 N-CH 25VMOSFET 2N-CH 25V 0.5A SC70-6MOSFET 2N-CH 25V 0.5A SC70-6
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6303N--
Transistor Type2 N-Channel--
TypeFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.45 S--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time8.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time3 ns--
Part # AliasesFDG6303N_NL--
Unit Weight0.000988 oz--
Package Case-6-TSSOP, SC-88, SOT-363-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SC-70-6-
FET Type-2 N-Channel (Dual)-
Power Max-300mW-
Drain to Source Voltage Vdss-25V-
Input Capacitance Ciss Vds-50pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-500mA-
Rds On Max Id Vgs-450 mOhm @ 500mA, 4.5V-
Vgs th Max Id-1.5V @ 250μA-
Gate Charge Qg Vgs-2.3nC @ 4.5V-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDG6303N MOSFET SC70-6 N-CH 25V
ON Semiconductor
ON Semiconductor
FDG6303N MOSFET 2N-CH 25V 0.5A SC70-6
FDG6303N_D87Z MOSFET 2N-CH 25V 0.5A SC70-6
FDG6303N_G INTEGRATED CIRCUIT
FDG6303N-F169 MOSFET 2N-CH 25V 0.5A SC70-6
FDG6303N-NL Neu und Original
FDG6303N-CUT TAPE Neu und Original
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