PartNumber | FDMC7200S | FDMC7200 |
Description | MOSFET DUAL N-CH. ER TRENCH MO | MOSFET DUAL N-CH. ER TRENCH MO |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | Power-33-8 | Power-33-8 |
Number of Channels | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V |
Id Continuous Drain Current | 18 A, 13 A | 6 A, 8 A |
Rds On Drain Source Resistance | 22 mOhms, 10 mOhms | 10 mOhms, 19 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Configuration | Dual | Dual |
Tradename | PowerTrench | PowerTrench |
Packaging | Reel | Reel |
Height | 0.8 mm | 0.8 mm |
Length | 3 mm | 3 mm |
Series | FDMC7200S | FDMC7200 |
Transistor Type | 2 N-Channel | 2 N-Channel |
Width | 3 mm | 3 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.006561 oz | 0.006561 oz |
Vgs th Gate Source Threshold Voltage | - | 2.3 V |
Qg Gate Charge | - | 3.1 nC, 7 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 1.9 W, 2.2 W |
Channel Mode | - | Enhancement |
Forward Transconductance Min | - | 29 S, 56 S |
Fall Time | - | 1.3 ns, 6 ns |
Rise Time | - | 3.1 ns, 4 ns |
Typical Turn Off Delay Time | - | 35 ns, 38 ns |
Typical Turn On Delay Time | - | 11 ns, 13 ns |