FDMS0310

FDMS0310S vs FDMS0310AS vs FDMS0310

 
PartNumberFDMS0310SFDMS0310ASFDMS0310
DescriptionMOSFET PT8 30V/20V NCH ERTRENMOSFET PT8 N 30/20 SYNCFET
ManufacturerON SemiconductorON SemiconductorFSC
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePower-56-8Power-56-8-
Number of Channels1 Channel--
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current19 A19 A-
Rds On Drain Source Resistance3.2 mOhms3.6 mOhms-
Vgs th Gate Source Threshold Voltage1.9 V1.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge33 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.5 W41 W-
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench SyncFETPowerTrench SyncFET-
PackagingReelReelReel
Height1.1 mm1.1 mm-
Length6 mm6 mm-
SeriesFDMS0310SFDMS0310AS-
Transistor Type2 N-channel--
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min97 S--
Fall Time4 ns3.2 ns3.2 ns
Product TypeMOSFETMOSFET-
Rise Time5 ns3.9 ns3.9 ns
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns25 ns25 ns
Typical Turn On Delay Time12 ns9 ns9 ns
Unit Weight0.002402 oz0.002610 oz0.002610 oz
Package Case--Power-56-8
Pd Power Dissipation--41 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--19 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.5 V
Rds On Drain Source Resistance--3.6 mOhms
Qg Gate Charge--27 nC
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS0310S MOSFET PT8 30V/20V NCH ERTREN
FDMS0310AS MOSFET PT8 N 30/20 SYNCFET
FDMS0310 Neu und Original
ON Semiconductor
ON Semiconductor
FDMS0310AS MOSFET N-CH 30V 19A PT8
FDMS0310S MOSFET N-CH 30V 19A
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