PartNumber | FDP100N10 | FDP10N60NZ | FDP10AN06A0 |
Description | MOSFET 100V N-Channel PowerTrench | MOSFET 600N-Channel MOSFET UniFET-II | MOSFET 60V 75a 0.0105Ohms/VGS=10V |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 600 V | 60 V |
Id Continuous Drain Current | 75 A | 10 A | 75 A |
Rds On Drain Source Resistance | 10 mOhms | 640 mOhms | 9.5 mOhms |
Vgs Gate Source Voltage | 20 V | 25 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Pd Power Dissipation | 208 W | 185 W | 135 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | PowerTrench | UniFET | - |
Packaging | Tube | Tube | Tube |
Height | 16.3 mm | 16.3 mm | 16.3 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FDP100N10 | FDP10N60NZ | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.7 mm | 4.7 mm | 4.7 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 115 ns | 50 nS | 36 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 265 ns | 50 ns | 128 ns |
Factory Pack Quantity | 800 | 1000 | 400 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 125 ns | 70 nS | 27 ns |
Typical Turn On Delay Time | 70 ns | 25 nS | 8 ns |
Unit Weight | 0.063493 oz | 0.063493 oz | 0.050717 oz |
Vgs th Gate Source Threshold Voltage | - | 5 V | - |
Qg Gate Charge | - | 23 nC | - |
Forward Transconductance Min | - | 14 S | - |
Type | - | - | MOSFET |