 |  | | |
| PartNumber | FDP39N20 | FDP39N20(SG) | FDP39N20-07 |
| Description | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 39 A | - | - |
| Rds On Drain Source Resistance | 66 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 251 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDP39N20 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 28.5 S | - | - |
| Fall Time | 150 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 160 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 150 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP39N20 | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | |
ON Semiconductor |
FDP39N20 | MOSFET N-CH 200V 39A TO-220 | |
| FDP39N20(SG) | Neu und Original | ||
| FDP39N20-07 | Neu und Original | ||
| FDP39N20-FSC | Neu und Original |