PartNumber | FDS6912 | FDS6912A | FDS6912-NL |
Description | MOSFET SO-8 DUAL N-CH 30V | MOSFET 2N-CH 30V 6A 8SOIC | |
Manufacturer | ON Semiconductor | Fairchild Semiconductor | F |
Product Category | MOSFET | IC Chips | IC Chips |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 24 mOhms | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2 W | - | - |
Configuration | Dual | Dual Dual Drain | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | PowerTrench | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Series | FDS6912 | PowerTrenchR | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Type | MOSFET | - | - |
Width | 3.9 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 20 S | - | - |
Fall Time | 8 ns | 5 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 13 ns | 5 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 18 ns | 23 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Part Aliases | - | FDS6912A_NL | - |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SO | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 900mW | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 575pF @ 15V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 6A | - |
Rds On Max Id Vgs | - | 28 mOhm @ 6A, 10V | - |
Vgs th Max Id | - | 3V @ 250μA | - |
Gate Charge Qg Vgs | - | 8.1nC @ 5V | - |
Pd Power Dissipation | - | 1.6 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 6 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 28 mOhms | - |
Forward Transconductance Min | - | 25 S | - |