FDU669

FDU6692 vs FDU6692-NL vs FDU6696

 
PartNumberFDU6692FDU6692-NLFDU6696
DescriptionPower Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AAPower Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Hersteller Teil # Beschreibung RFQ
FDU6692 Power Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
FDU6692-NL Neu und Original
FDU6696 Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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