FDU887

FDU8870 vs FDU8874 vs FDU8876

 
PartNumberFDU8870FDU8874FDU8876
DescriptionMOSFET 30V N-Channel PowerTrenchMOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFETMOSFET N-CH 30V 73A I-PAK
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryMOSFETMOSFETFETs - Single
RoHSYE-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current160 A116 A-
Rds On Drain Source Resistance3.9 mOhms5.1 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation160 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time42 ns37 ns-
Product TypeMOSFETMOSFET-
Rise Time83 ns96 ns-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time83 ns47 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesFDU8870_NLFDU8874_NL-
Unit Weight0.139332 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDU8870 MOSFET 30V N-Channel PowerTrench
FDU8874 MOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFET
ON Semiconductor
ON Semiconductor
FDU8870 MOSFET N-CH 30V 160A I-PAK
FDU8874 MOSFET N-CH 30V 116A I-PAK
FDU8876 MOSFET N-CH 30V 73A I-PAK
FDU8878 MOSFET N-CH 30V 40A I-PAK
FDU8870FSC Neu und Original
FDU8874(NF071) Neu und Original
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