FF200R12KS4

FF200R12KS4 vs FF200R12KS4PHOSA1 vs FF200R12KS4HOSA1

 
PartNumberFF200R12KS4FF200R12KS4PHOSA1FF200R12KS4HOSA1
DescriptionIGBT Modules 1200V 200A DUALIGBT Modules MEDIUM POWER 62MMIGBT MODULE VCES 1200V 200A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSNY-
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage3.2 V--
Continuous Collector Current at 25 C275 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1.4 kW--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTrayTray-
Height30.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity108-
SubcategoryIGBTsIGBTs-
Part # AliasesFF200R12KS4HOSA1 SP000100707FF200R12KS4P SP001403816-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
FF200R12KS4 IGBT Modules 1200V 200A DUAL
FF200R12KS4PHOSA1 IGBT Modules MEDIUM POWER 62MM
FF200R12KS4HOSA1 IGBT MODULE VCES 1200V 200A
FF200R12KS4PHOSA1 MEDIUM POWER 62MM
FF200R12KS4 IGBT Modules 1200V 200A DUAL
FF200R12KS4 , 1N5363B Neu und Original
FF200R12KS4-B2 Neu und Original
FF200R12KS45 Neu und Original
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