FGA50N100 stock, FGA50N100, FGA50N100BNTDTU


PartNumber	FGA50N100BNTDTU	FGA50N100BNTD2	FGA50N100BNTTU
Description	IGBT Transistors 600V 4 0A UFD	IGBT Transistors N-ch / 50A 1000V	IGBT 1000V 50A 156W TO3P
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	IGBT Transistors	IGBT Transistors	-
RoHS	Y	Y	-
Technology	Si	Si	-
Package / Case	TO-3P-3	TO-3PN	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	1000 V	1000 V	-
Collector Emitter Saturation Voltage	2.5 V	1.5 V	-
Maximum Gate Emitter Voltage	25 V	25 V	-
Pd Power Dissipation	156 W	156 W	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	FGA50N100BNTD	FGA50N100BNTD2	-
Packaging	Tube	Tube	-
Continuous Collector Current Ic Max	50 A	-	-
Height	18.9 mm	-	-
Length	15.8 mm	-	-
Width	5 mm	-	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	50 A	-	-
Gate Emitter Leakage Current	+/- 500 nA	500 nA	-
Product Type	IGBT Transistors	IGBT Transistors	-
Factory Pack Quantity	450	450	-
Subcategory	IGBTs	IGBTs	-
Unit Weight	0.225789 oz	0.225789 oz	-
Continuous Collector Current at 25 C	-	50 A	-

Search Part Number : "FGA50N100", Match & Start with "FGA50N100" - Total : 10

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	FGA50N100BNTDTU	IGBT Transistors 600V 4 0A UFD
ON Semiconductor / Fairchild	FGA50N100BNTD2	IGBT Transistors N-ch / 50A 1000V
ON Semiconductor	FGA50N100BNTD2	IGBT Transistors N-ch / 50A 1000V
	FGA50N100BNTDTU	IGBT Transistors 600V 4 0A UFD
	FGA50N100BNTTU	IGBT 1000V 50A 156W TO3P
	FGA50N100	Neu und Original
	FGA50N100BNT	Neu und Original
	FGA50N100BNTD2,FGA50N100	Neu und Original
	FGA50N100BNTDTU(SBXD001)	Neu und Original
	FGA50N100BNTD	Neu und Original

FGA50N100