 |  | |
| PartNumber | FGH40T70SHD-F155 | FGH40T70SHD_F155 |
| Description | IGBT Transistors 650V FS Gen3 Trench IGBT | 650V FS Gen3 Trench IGBT - Rail/Tube (Alt: FGH40T70SHD-F155) |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor |
| Product Category | IGBT Transistors | IGBTs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Package / Case | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 700 V | - |
| Collector Emitter Saturation Voltage | 2.37 V | 2.37 V |
| Maximum Gate Emitter Voltage | 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A |
| Pd Power Dissipation | 268 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | FGH40T70SHD | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 80 A | 80 A |
| Brand | ON Semiconductor / Fairchild | - |
| Gate Emitter Leakage Current | +/- 400 nA | +/- 400 nA |
| Product Type | IGBT Transistors | - |
| Factory Pack Quantity | 450 | - |
| Subcategory | IGBTs | - |
| Part # Aliases | FGH40T70SHD_F155 | - |
| Unit Weight | 0.225401 oz | - |
| Package Case | - | TO-247-3 |
| Pd Power Dissipation | - | 268 W |
| Collector Emitter Voltage VCEO Max | - | 700 V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGH40T70SHD-F155 | IGBT Transistors 650V FS Gen3 Trench IGBT | |
ON Semiconductor |
FGH40T70SHD-F155 | 650V FS GEN3 TRENCH IGBT | |
| FGH40T70SHD_F155 | 650V FS Gen3 Trench IGBT - Rail/Tube (Alt: FGH40T70SHD-F155) |