FGL60N100BN stock, FGL60N100BN, FGL60N100BNTD


PartNumber	FGL60N100BNTD	FGL60N100BNTDTU
Description	IGBT Transistors HIGH POWER	IGBT Transistors HIGH POWER
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-264-3	TO-264-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1000 V	1000 V
Collector Emitter Saturation Voltage	1.5 V	1.5 V
Maximum Gate Emitter Voltage	25 V	25 V
Continuous Collector Current at 25 C	60 A	60 A
Pd Power Dissipation	180 W	180 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	FGL60N100BNTD	FGL60N100BNTD
Packaging	Tube	Tube
Continuous Collector Current Ic Max	60 A	60 A
Height	26 mm	26 mm
Length	20 mm	20 mm
Width	5 mm	5 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	60 A	60 A
Gate Emitter Leakage Current	+/- 500 nA	+/- 500 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	375	375
Subcategory	IGBTs	IGBTs
Part # Aliases	FGL60N100BNTD_NL	FGL60N100BNTDTU_NL
Unit Weight	0.238311 oz	0.238311 oz

Search Part Number : "FGL60N100BN", Match & Start with "FGL60N100BN" - Total : 14

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	FGL60N100BNTD	IGBT Transistors HIGH POWER
ON Semiconductor / Fairchild	FGL60N100BNTDTU	IGBT Transistors HIGH POWER
ON Semiconductor	FGL60N100BNTDTU	IGBT Transistors HIGH POWER
ON Semiconductor	FGL60N100BNTD	IGBT 1000V 60A 180W TO264
	FGL60N100BNTD--	Neu und Original
	FGL60N100BN	Neu und Original
	FGL60N100BN1D	Neu und Original
	FGL60N100BND	Neu und Original
	FGL60N100BNTD G60N100BN	Neu und Original
	FGL60N100BNTD G60N100BNT	Neu und Original
	FGL60N100BNTD,FGL40N120A	Neu und Original
	FGL60N100BNTDT	Neu und Original
	FGL60N100BNTDTU,G60N100B	Neu und Original
	FGL60N100BNTDU	Neu und Original

FGL60N100BN