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FGW15N1

FGW15N120H vs FGW15N120HD vs FGW15N120VD

 
PartNumberFGW15N120HFGW15N120HDFGW15N120VD
DescriptionPower Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FETIGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
Hersteller Teil # Beschreibung RFQ
FGW15N120H Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
FGW15N120HD IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3
FGW15N120VD IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
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