FJN3307R

FJN3307RBU vs FJN3307RBU_Q vs FJN3307RTA

 
PartNumberFJN3307RBUFJN3307RBU_QFJN3307RTA
DescriptionBipolar Transistors - Pre-Biased 50V/100mA/22K 47KBipolar Transistors - Pre-Biased 50V/100mA/22K 47KTRANS PREBIAS NPN 300MW TO92-3
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Typical Resistor Ratio0.47--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
DC Collector/Base Gain hfe Min68--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingBulk--
DC Current Gain hFE Max68--
Emitter Base Voltage VEBO10 V--
Height5.33 mm--
Length5.2 mm--
TypeNPN Epitaxial Silicon Transistor--
Width4.19 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.006286 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJN3307RBU Bipolar Transistors - Pre-Biased 50V/100mA/22K 47K
FJN3307RBU_Q Bipolar Transistors - Pre-Biased 50V/100mA/22K 47K
ON Semiconductor
ON Semiconductor
FJN3307RTA TRANS PREBIAS NPN 300MW TO92-3
FJN3307RBU TRANS PREBIAS NPN 300MW TO92-3
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