FJN4

FJN4314RTA vs FJN431RTA

 
PartNumberFJN4314RTAFJN431RTA
DescriptionBipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ManufacturerON Semiconductor-
Product CategoryBipolar Transistors - Pre-Biased-
RoHSY-
ConfigurationSingle-
Transistor PolarityPNP-
Typical Input Resistor4.7 kOhms-
Typical Resistor Ratio0.1-
Mounting StyleThrough Hole-
Package / CaseTO-92-3 Kinked Lead-
DC Collector/Base Gain hfe Min68-
Collector Emitter Voltage VCEO Max50 V-
Continuous Collector Current- 0.1 A-
Peak DC Collector Current100 mA-
Pd Power Dissipation300 mW-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
PackagingAmmo Pack-
DC Current Gain hFE Max68-
Emitter Base Voltage VEBO- 10 V-
Height5.33 mm-
Length5.2 mm-
TypePNP Epitaxial Silicon Transistor-
Width4.19 mm-
BrandON Semiconductor / Fairchild-
Product TypeBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity2000-
SubcategoryTransistors-
Unit Weight0.010088 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FJN4314RTA Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor
ON Semiconductor
FJN4314RTA TRANS PREBIAS PNP 300MW TO92-3
FJN431RTA Neu und Original
Top