PartNumber | FJN4302RTA | FJN4301RTA | FJN4301RBU |
Description | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial | Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Configuration | Single | Single | Single |
Transistor Polarity | PNP | PNP | PNP |
Typical Input Resistor | 10 kOhms | 4.7 kOhms | 4.7 kOhms |
Typical Resistor Ratio | 1 | 1 | 1 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead | TO-92-3 |
DC Collector/Base Gain hfe Min | 30 | 20 | 20 |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Continuous Collector Current | - 0.1 A | - 0.1 A | - 0.1 A |
Peak DC Collector Current | 100 mA | 100 mA | 100 mA |
Pd Power Dissipation | 300 mW | 300 mW | 300 mW |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | FJN4302R | FJN4301R | - |
Packaging | Ammo Pack | Ammo Pack | Bulk |
DC Current Gain hFE Max | 30 | 20 | 20 |
Emitter Base Voltage VEBO | - 10 V | - 10 V | - 10 V |
Height | 5.33 mm | 5.33 mm | 5.33 mm |
Length | 5.2 mm | 5.2 mm | 5.2 mm |
Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor |
Width | 4.19 mm | 4.19 mm | 4.19 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 2000 | 2000 | 1000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | FJN4302RTA_NL | - | - |
Unit Weight | 0.008466 oz | 0.008466 oz | 0.006286 oz |