 |  | | |
| PartNumber | FMB857B | FMB80N10T2 | FMB857B , 1SMA40AT3G |
| Description | Bipolar Transistors - BJT PNP Epitaxial Transistor | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | T | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SSOT-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 475 | - | - |
| Height | 1.12 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.68 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 220 | - | - |
| Pd Power Dissipation | 700 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001270 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FMB857B | Bipolar Transistors - BJT PNP Epitaxial Transistor | |
| FMB80N10T2 | Neu und Original | ||
| FMB857B , 1SMA40AT3G | Neu und Original | ||
| FMB857B-NL | Neu und Original | ||
ON Semiconductor |
FMB857B | TRANS PNP 45V 0.5A SSOT-6 |