FP75R0

FP75R07N2E4 vs FP75R06KE3 vs FP75R06KE3BOSA1

 
PartNumberFP75R07N2E4FP75R06KE3FP75R06KE3BOSA1
DescriptionIGBT Modules IGBT Module 75A 650VIGBT Modules IGBT-MODULEIGBT MODULE VCES 600V 75A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSY--
ProductIGBT Silicon ModulesIGBT Silicon Modules-
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.95 V--
Continuous Collector Current at 25 C75 A95 A-
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesFP75R07N2E4BOSA1 SP000843284FP75R06KE3BOSA1 SP000091924-
Configuration-Array 7-
Package / Case-Econo 3-
Height-17 mm-
Length-107.5 mm-
Width-45 mm-
Unit Weight-10.793832 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
FP75R07N2E4 IGBT Modules IGBT Module 75A 650V
FP75R06KE3 IGBT Modules IGBT-MODULE
FP75R06KE3BOSA1 IGBT MODULE VCES 600V 75A
FP75R07N2E4B11BOSA1 IGBT MODULE VCES 600V 75A
FP75R07N2E4BOSA1 IGBT MODULE VCES 600V 75A
FP75R06KE3_B13ENG Neu und Original
FP75R07N2E4_B11 IGBT Modules IGBT Module 75A 650V
FP75R06KE3 IGBT Modules IGBT-MODULE
FP75R07N2E4 IGBT Modules IGBT Module 75A 650V
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