PartNumber | FP75R12KT3 | FP75R12KT3 , 1SMB5926BT3 | FP75R12KT3B11 |
Description | IGBT Modules N-CH 1.2KV 105A | ||
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Hex | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.15 V | - | - |
Continuous Collector Current at 25 C | 105 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 355 W | - | - |
Package / Case | Econo 3 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 125 C | - | - |
Packaging | Tray | - | - |
Height | 17 mm | - | - |
Length | 122 mm | - | - |
Width | 62 mm | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FP75R12KT3BOSA1 SP000100443 | - | - |
Unit Weight | 10.582189 oz | - | - |