FP75R12KT3

FP75R12KT3 vs FP75R12KT3 , 1SMB5926BT3 vs FP75R12KT3B11

 
PartNumberFP75R12KT3FP75R12KT3 , 1SMB5926BT3FP75R12KT3B11
DescriptionIGBT Modules N-CH 1.2KV 105A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation355 W--
Package / CaseEcono 3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP75R12KT3BOSA1 SP000100443--
Unit Weight10.582189 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
FP75R12KT3 IGBT Modules N-CH 1.2KV 105A
FP75R12KT3BOSA1 IGBT MODULE VCES 600V 75A
FP75R12KT3 , 1SMB5926BT3 Neu und Original
FP75R12KT3B11 Neu und Original
FP75R12KT3 IGBT Modules N-CH 1.2KV 105A
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