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| PartNumber | FP75R12KT4 | FP75R12KT4B11BOSA1 | FP75R12KT4B15BOSA1 |
| Description | IGBT Modules 1.85V IGBT 4 PIM | IGBT MODULE 1200V 75A | Trans IGBT Module N-CH 1200V 75A 385000mW 35-Pin Tray |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | 3-Phase | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.25 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 385 W | - | - |
| Package / Case | Econo 3 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FP75R12KT4BOSA1 SP000355581 | - | - |
| Unit Weight | 10.582189 oz | - | - |