FQA7N80C stock, FQA7N80C, FQA7N80C-F109


PartNumber	FQA7N80C-F109	FQA7N80C
Description	MOSFET 800V N-Ch Q-FET advance C-Series	MOSFET 800V N-Ch Q-FET advance C-Series
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-3PN-3	TO-3PN-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	800 V
Id Continuous Drain Current	7 A	7 A
Rds On Drain Source Resistance	1.9 Ohms	1.9 Ohms
Vgs Gate Source Voltage	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	198 W	198 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	QFET	-
Packaging	Tube	Tube
Height	20.1 mm	20.1 mm
Length	16.2 mm	16.2 mm
Series	FQA7N80C_F109	-
Transistor Type	1 N-Channel	1 N-Channel
Width	5 mm	5 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Fall Time	60 ns	60 ns
Product Type	MOSFET	MOSFET
Rise Time	100 ns	100 ns
Factory Pack Quantity	450	30
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	50 ns	50 ns
Typical Turn On Delay Time	35 ns	35 ns
Part # Aliases	FQA7N80C_F109	FQA7N80C_NL
Unit Weight	0.225789 oz	0.000198 oz
Type	-	MOSFET
Forward Transconductance Min	-	5.6 S

Search Part Number : "FQA7N80C", Match & Start with "FQA7N80C" - Total : 6

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	FQA7N80C-F109	MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor / Fairchild	FQA7N80C	MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor	FQA7N80C	MOSFET N-CH 800V 7A TO-3P
ON Semiconductor	FQA7N80C-F109	MOSFET N-CH 800V 7A TO-3P
	FQA7N80C,FQA7N80	Neu und Original
	FQA7N80C_F109	Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series

FQA7N80C