FQB

FQB27P06TM vs FQB27N25TM-F085 vs FQB25N33TM-F085

 
PartNumberFQB27P06TMFQB27N25TM-F085FQB25N33TM-F085
DescriptionMOSFET 60V P-Channel QFETMOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFETMOSFET 330V NCH MOSFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V250 V330 V
Id Continuous Drain Current27 A25.5 A25 A
Rds On Drain Source Resistance55 mOhms108 mOhms230 mOhms
Vgs Gate Source Voltage25 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation3.75 W417 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
Height4.83 mm4.83 mm4.83 mm
Length10.67 mm10.67 mm10.67 mm
SeriesFQB27P06FQB27N25TM_F085FQB25N33TM_F085
Transistor Type1 P-Channel1 N-Channel1 N-Channel
TypeMOSFET--
Width9.65 mm9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min12.4 S--
Fall Time90 ns60 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time185 ns122 ns-
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time30 ns81 ns-
Typical Turn On Delay Time18 ns36 ns-
Unit Weight0.070548 oz0.046296 oz0.046296 oz
Vgs th Gate Source Threshold Voltage-4.1 V-
Qg Gate Charge-45 nC-
Qualification-AEC-Q101AEC-Q101
Tradename-UltraFET-
Part # Aliases-FQB27N25TM_F085FQB25N33TM_F085
  • Beginnen mit
  • FQB 525
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB27P06TM MOSFET 60V P-Channel QFET
FQB27N25TM-F085 MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET
FQB25N33TM-F085 MOSFET 330V NCH MOSFET
FQB2N60TM MOSFET 600V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQB22P10TM-F085 MOSFET P-CH 100V 22A D2PAK
FQB24N08TM MOSFET N-CH 80V 24A D2PAK
FQB25N33TM MOSFET N-CH 330V 25A D2PAK
FQB25N33TM-F085 MOSFET N-CH 330V 25A D2PAK
FQB27N25TM_AM002 MOSFET N-CH 250V 25.5A D2PAK
FQB27P06TM MOSFET P-CH 60V 27A D2PAK
FQB2N50TM MOSFET N-CH 500V 2.1A D2PAK
FQB2N60TM MOSFET N-CH 600V 2.4A D2PAK
FQB2N80TM MOSFET N-CH 800V 2.4A D2PAK
FQB2N90TM MOSFET N-CH 900V 2.2A D2PAK
FQB2N30TM MOSFET N-CH 300V 2.1A D2PAK
FQB27N25TM-F085 MOSFET N-CH 250V 25.5A 131M
FQB22P10TM-NL Neu und Original
FQB22P10TM_F085 -100V /-22A/0.125HM@VGS=-10V
FQB24N08 Neu und Original
FQB24N08TM-NL Neu und Original
FQB2532 Neu und Original
FQB25N33 Neu und Original
FQB25N33TM-NB82122 Neu und Original
FQB27N25 Neu und Original
FQB27N25TM Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB27N25TM-AM002 Neu und Original
FQB27N25TM-NL Neu und Original
FQB27N25TM_F085 250V, 0.11OHM, 25.5A, N-CH MOS
FQB27N25TU Neu und Original
FQB27P06 Neu und Original
FQB27P06C Neu und Original
FQB27P06TM-NL Neu und Original
FQB27P06TM2400 Neu und Original
FQB27PPP06TM Neu und Original
FQB28N04 Neu und Original
FQB28N15 Neu und Original
FQB28N30 Neu und Original
FQB2N100 Neu und Original
FQB2N30 Neu und Original
FQB2N50 Neu und Original
FQB2N50TM-NL Neu und Original
FQB2N60 Neu und Original
FQB2N60TM-NL Neu und Original
FQB2N80 Neu und Original
FQB2N80TM-NL Neu und Original
FQB2N90 Neu und Original
FQB2N90TM-NL Neu und Original
FQB2NA90 Neu und Original
FQB25N33TM_F085 IGBT Transistors MOSFET 330V NCH MOSFET
FQB27P06TM-CUT TAPE Neu und Original
Top