 | |  | |
| PartNumber | FQB12N60TM | FQB12N60TM-NL | FQB12N60TM_AM002 |
| Description | Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 600V 10.5A D2PAK |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| FQB12N60TM | Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB12N60TM-NL | Neu und Original | ||
ON Semiconductor |
FQB12N60TM_AM002 | MOSFET N-CH 600V 10.5A D2PAK |