 | | | |
| PartNumber | FQB27N25 | FQB27N25TM | FQB27N25TM-AM002 |
| Description | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB27N25TM-F085 | MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET | |
| FQB27N25 | Neu und Original | ||
| FQB27N25TM | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB27N25TM-AM002 | Neu und Original | ||
| FQB27N25TM-NL | Neu und Original | ||
| FQB27N25TM_F085 | 250V, 0.11OHM, 25.5A, N-CH MOS | ||
| FQB27N25TU | Neu und Original | ||
ON Semiconductor |
FQB27N25TM_AM002 | MOSFET N-CH 250V 25.5A D2PAK | |
| FQB27N25TM-F085 | MOSFET N-CH 250V 25.5A 131M |